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June 2006
FDC608PZ
P-Channel 2.5V Specified PowerTrench ? MOSFET
tm
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
? –5.8 A, –20 V.
R DS(ON) = 30 m ? @ V GS = –4.5 V
R DS(ON) = 43 m ? @ V GS = –2.5 V
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for battery power
applications: load switching and power management,
? Low Gate Charge
? High performance trench technology for extremely
low R DS(ON)
battery power circuits, and DC/DC conversions.
? SuperSOT
TM
–6 package: small footprint (72%
smaller than standard SO–8 ) low profile (1mm thick).
D
D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–20
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–5.8
A
– Pulsed
–20
P D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.608Z
Device
FDC608PZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2006 Fairchild Semiconductor Corporation
FDC608PZ Rev B (W)
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